Worst Case Heavy Ion Testing Conditions for Normally Off GaN-Based High Electron Mobility Transistor
Abstract: Single Event Effect of GaN HEMT devices is usually done using the same testing conditions as the one developed and validated a long time ago for MOSFETs components. This paper presents two ...
Abstract: Compared with the discrete insulated gate bipolar transistor (IGBT), the silicon-on-insulator lateral IGBT (SOI-LIGBT) owns the advantage of being integrated with peripheral circuits easily ...
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