Abstract: Position-sensitive detectors (PSDs) based on the lateral photovoltaic effect (LPE) have been widely utilized in various applications and how to improve the LPE sensitivity has attracted ...
Abstract: We present a CMOS-compatible multilevel nanophotonic resistive switching device based on Ag-ITO-SiO 2 structure on silicon emphasizing high storage density. The device exhibits stable ...
MIT researchers have designed silicon structures that can perform calculations in an electronic device using excess heat instead of electricity. These tiny structures could someday enable more ...
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