Abstract: An overview is presented of displacement damage (DD) effects, total-ionizing-dose (TID) effects, and single-event effects in AlGaN/GaN high electron mobility transistors (HEMTs).
Abstract: Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and form factor of power electronics. However, the material composition, architecture, and physics of ...
Gilas Pilipinas men’s and women’s 5×5 basketball teams see action in the 33rd Southeast Asian Games at Nimibutr Stadium in Bangkok, Thailand. The men’s team is the defending champion in the tournament ...
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