Analysis of Single-Event Leakage Current Degradation Induced by Heavy-Ion Irradiation in SiC MOSFETs
Abstract: The application of silicon carbide MOSFETs (SiC MOSFETs) in space is severely restricted by single-event burnout (SEB) and single-event leakage current (SELC) induced by heavy ions, yet the ...
Booming AI-driven HBM demand boosts Micron's profits, pricing power, and growth prospects. Click here to read an analysis of ...
Abstract: The calculation of the eddy current field in the motional scenario is a difficult problem. Due to the movement of conductors, the original mesh may be largely deformed. For engineering ...
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