Abstract: The threshold voltage shift issue caused by traps in silicon carbide metal-oxide-semiconductor field-effect transistors (SiC MOSFETs) is studied based on transient current method. Experiment ...
Abstract: A high-temperature (HT) SPICE model of the silicon carbide (SiC) nMOS and pMOS along with the transient characteristics is presented in this article. This work extends the BSIM4SiC model, ...
Researchers at the Technical University of Munich (TUM) have developed a method for diagnosing urinary tract infections that ...
ABSTRACT: The utilization of fish embryos in toxicity testing of hazardous chemicals has recently been adopted in order to satisfy stricter rules and regulations related to using adult animals in ...
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