Fast, Low-Resistance Nano Gap Electromechanical Switch for Power Gating Applications” was published by researchers at KAIST and Chonnam National University. Abstract “The growing demand for artificial ...
Abstract: It is well known that insulated-gate bipolar transistors (IGBTs) are often operated in complex electromagnetic environments, however, there are few researches on magnetic field interference ...
Abstract: This article introduces an innovative wireless power transfer (WPT) based snubber circuit designed to mitigate the switching oscillations of SiC MOSFET, caused by parasitic impedances in the ...
Infineon Technologies AG launches new packages for the CoolSiC MOSFET 750 V G2 technology, engineered to deliver the highest system efficiency and power density in automotive and industrial power ...
Infineon Technologies launches new packages for the CoolSiC MOSFET 750V G2 technology, available in packages, including ...
Much EV development prompts digital innovation, yet tried-and-true analog approaches, such as LLCs offer measurable benefits.
Rigorous testing demonstrates the reliability and robustness of commercial 1250 V GaN HEMTs paired with a low-voltage silicon MOSFET to ensure normally-off operation. Material properties govern the ...
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