Abstract: In this paper, an analytical temperature-dependent I-V model of gallium nitride (GaN) highelectron- mobility transistors (HEMTs) is established by using the Gaussian function. Compared with ...
Abstract: The emergence of wide bandgap power devices based on Gallium Nitride (GaN) material has propelled the development of power electronic converters towards high frequency, high power density, ...
Scientists from Tokyo Metropolitan University have re-engineered the popular Lattice-Boltzmann Method (LBM) for simulating ...
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