Abstract: Electrodynamic simulations in the Yee-lattice finite-difference time-domain method (YL-FDTDM) require half-unit-cell and half-time-unit offsets between electric and magnetic field components ...
Abstract: Among the wide-bandgap devices, gallium nitride high electron mobility transistors (GaN HEMTs) are contributing to the high power density technology of power conversion systems due to their ...
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