Abstract: An overview is presented of displacement damage (DD) effects, total-ionizing-dose (TID) effects, and single-event effects in AlGaN/GaN high electron mobility transistors (HEMTs).
Chris Salgardo, founder of Atwater and former president of Kiehl’s, says the best travel hack is to keep a small go-pouch full of essentials like your passport, eye mask, melatonin, and a pen that’s ...
Abstract: To enhance the consistency and system efficiency of lithium-ion battery packs during charging and discharging, this paper develops and compares three active equalization topologies and ...
Accelerate your tech game Paid Content How the New Space Race Will Drive Innovation How the metaverse will change the future of work and society Managing the ...
onsemi and Innoscience announced the signing of a memorandum of understanding (MoU) to evaluate opportunities to accelerate deployment of GaN power devices, starting with 40-200V, and significantly ...
onsemi announced it has signed a memorandum of understanding with Innoscience to explore expanding production of gallium nitride (GaN) power devices using Innoscience’s proven 200mm GaN-on-silicon ...
(RTTNews) - onsemi and Innoscience on Tuesday announced the signing of a memorandum of understanding (MoU) to evaluate opportunities to accelerate the deployment of GaN power devices, starting with 40 ...
Collaboration would add high-volume, cost-optimized, worldwide GaN manufacturing for faster market deployment of energy-efficient power devices onsemi announced it has signed a memorandum of ...
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