IEEE

Effect of Source Electrostatic Interaction on the Off-State Leakage Current of p-GaN Gate HEMTs

Abstract: To assess the reliability of GaN power transistors, off-state leakage characteristic is measured for Schottky p-GaN gate HEMTs under negative gate biases. It is found that the drain leakage ...

Bi Gan on Pushing Cinema’s Horizons for ‘Resurrection’ — and the Year’s Most Extraordinary One-Take Scene

Bi Gan talks his Cannes winner 'Resurrection' and building the film's extraordinary one-take sequence involving a raincoat ...
The New Yorker

Bi Gan’s Dream Factory

With “Resurrection,” the director has made a surrealist epic not just about Chinese history but about the cinema itself.
The New York Times

‘Resurrection’ Review: A Hallucinatory Voyage Into Cinema

The Chinese director Bi Gan, who has become a lauded fixture on the festival circuit, conjures a boundary-pushing tale that evokes moviemaking itself. By Manohla Dargis When you purchase a ticket for ...
powerelectronicsnews

PEN eBook November 2025 – GaN and SiC Special Report

WBG semiconductors are changing the way modern technology works. Materials such as GaN and SiC are changing the game in power electronics. Wide-bandgap (WBG) semiconductors are changing the way modern ...
IEEE

Decoupled Double-Channel p-GaN Gate AlGaN/GaN HEMT Featuring Low Reverse Conduction Loss and High Forward Threshold Voltage

Abstract: A Hybrid-Source p-GaN gate Normally-OFF AlGaN/GaN HEMT is proposed and successfully fabricated, based on a decoupled double-channel structure. It mitigates the compatibility issue between ...