Abstract: In recent years, an increasing trend towards GaN integration can be observed, enabled by the lateral structure of the GaN technology. A key improvement over a discrete implementation is the ...
Abstract: An overview is presented of displacement damage (DD) effects, total-ionizing-dose (TID) effects, and single-event effects in AlGaN/GaN high electron mobility transistors (HEMTs).
conda env create -f environment.yaml pip install numba==0.54.0 patsy==0.5.2 sktime==0.4.0 statsmodels==0.13.0 tf-slim==1.1.0 torchdiffeq==0.2.2 tqdm==4.62.3 python GTGAN_energy.py --data energy --atol ...
Our method MI-GAN can produce plausible results both on complex scene images as well as on face images. The bubble chart on the right shows the advantage of our network over state-of-the-art ...
The advent of large-scale training has produced a cornucopia of powerful visual recognition models. However, generative models, such as GANs, have traditionally been trained from scratch in an ...
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