Abstract: A monolithic bidirectional switch based on anti-paralleled two reverse blocking p-GaN HEMTs has been proposed and demonstrated in this work. The recessed Schottky drain technique is utilized ...
View source version on businesswire.com: https://www.businesswire.com/news/home/20251211350265/en/ The articles, information, and content displayed on this webpage ...
Abstract: A Hybrid-Source p-GaN gate Normally-OFF AlGaN/GaN HEMT is proposed and successfully fabricated, based on a decoupled double-channel structure. It mitigates the compatibility issue between ...
Forward Industries, Inc. (NASDAQ: FWDI) (the "Company" or “Forward Industries”), the leading Solana treasury company, today announced a shareholder update with key operational highlights following the ...
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