Abstract: We present a systematic study on the design of a novel GaN/AlGaN/GaN super-heterojunction Schottky diode. Through physics-based TCAD simulation, we discuss three important design aspects: 1) ...
Strategic collaboration integrates next-generation SPAD-based image sensor into Renishaw's new Raman spectroscopy module to allow measurements of highly fluorescent samplesEDINBURGH, Scotland ...