IEEE

A Novel SiGe Nanosheet Transistor With Channel Release Stopping Layer Structure for Process Variations Suppression and Circuit Performance Improvement

Abstract: In this study, SiGe channel nanosheet field-effect transistor (NSFET) with a novel channel release stopping layer (CRSL), namely CRSL-SiGe NSFET, is proposed to addresses the issue of ...

MIT electronics researchers develop a new way to fabricate transistors on the backend of finished dies, to keep pushing the limit of chip densities ever higher

Traditional CMOS chips are fabricated by applying and then etching repeated layers of different materials, applied to a wafer of ultra-pure silicon. The bottom-most layer, also known as the front end ...
IEEE

Investigation on Single Pulse Failure of Avalanche Transistors Triggered by Voltage Ramps in Marx Bank Circuits

Abstract: Although the Marx bank circuit (MBC) based on the avalanche bipolar junction transistor (ABJT) is widely used in the field of pulse power generators, the main trouble that ABJT triggered by ...

The Field Effect Transistor Centennial And My Final IEEE Event

I attended an AI conference in Seattle and participated in the 2025 IEDM and its celebration of the 100th anniversary of the Field Effect Transistor.