“With BVceo up to 100V, continuous current to 10A – and 20A peak – and saturation voltage as low as 17mV, these transistors ...

Abstract: Herein, thin-film transistors (TFT) with ITO as the n-channel active layer were prepared on transparent substrates by magnetron sputtering at room temperature. The use of chitosan with an ...

MIT researchers have developed a new fabrication method that could enable the production of more energy efficient electronics by stacking multiple functional components on top of one existing circuit.

Abstract: In this work we develop an ALD grown IGZO channel material and integrate it into a double-gated transistor test vehicle. We analyze physical mechanism and device reliability governed by ...