Abstract: Recent developments in artificial intelligence (AI) have triggered growing studies in artificial synaptic transistors. However, achieving tunable synaptic behaviors and improving synaptic ...
Worst Case Heavy Ion Testing Conditions for Normally Off GaN-Based High Electron Mobility Transistor
Abstract: Single Event Effect of GaN HEMT devices is usually done using the same testing conditions as the one developed and validated a long time ago for MOSFETs components. This paper presents two ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback