Abstract: In this study, AlGaN/GaN high-electron mobility transistors (HEMT) with Γ-shaped gate structure was developed and analyzed for Ka-band application. Under the frequency of 28 GHz, the ...
Abstract: The present work compares single-gate (SG) and dual-gate (DG) HEMTs from a low-noise amplification perspective. Experimental results, obtained through RF and noise measurements in the 5 to ...
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