Abstract: In this paper, an analytical temperature-dependent I-V model of gallium nitride (GaN) highelectron- mobility transistors (HEMTs) is established by using the Gaussian function. Compared with ...
Abstract: The emergence of wide bandgap power devices based on Gallium Nitride (GaN) material has propelled the development of power electronic converters towards high frequency, high power density, ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results