Abstract: Electrodynamic simulations in the Yee-lattice finite-difference time-domain method (YL-FDTDM) require half-unit-cell and half-time-unit offsets between electric and magnetic field components ...
Abstract: Among the wide-bandgap devices, gallium nitride high electron mobility transistors (GaN HEMTs) are contributing to the high power density technology of power conversion systems due to their ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback