Abstract: An overview is presented of displacement damage (DD) effects, total-ionizing-dose (TID) effects, and single-event effects in AlGaN/GaN high electron mobility transistors (HEMTs).

PATTAYA, Thailand – Gilas Pilipinas Men 3x3 survived a scare from Malaysia before pulling off a 21-19 win and staying unbeaten on Wednesday in the 33rd Southeast Asian Games at the Nimibutr Stadium in ...

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Abstract: In recent years, an increasing trend towards GaN integration can be observed, enabled by the lateral structure of the GaN technology. A key improvement over a discrete implementation is the ...