SiC and GaN stand center stage, controlling many different industries’ dynamics. With power management becoming a fundamental aspect of emerging electronics applications such as vehicle ...

WBG semiconductors are changing the way modern technology works. Materials such as GaN and SiC are changing the game in power electronics. Wide-bandgap (WBG) semiconductors are changing the way modern ...

Empower announced a new corporate headquarters in Milpitas, California, and a dedicated R&D center in Munich, Germany. Empower Semiconductor, an AI chipmaker based in Silicon Valley, has announced a ...

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In order to cover all power industry segments, this article also relies on analysis of a study done by Dr. Ray Ridley of Ridley Engineering based on input from his LinkedIn “Power Supplies” group. The ...

In an interview with Power Electronics News, Shyh-Chiang Shen, Director of GaN Program Development Division at VIS, discussed the techniques and innovations VIS used to overcome obstacles, emphasizing ...

The number of products needing charging is increasing, and so is the need for fast-charging, high-capacity batteries. Over the past decade, wireless power transfer functionality has been broadly ...

Cell-to-pack is an innovative battery design that involves integrating the cells directly into the pack, eliminating the need for the traditional module-based architectures. Dukosi offers an ...

This article begins a series of tutorials related to the QSPICE software for electronic circuit simulation. With the help of theoretical and practical examples, you will gain knowledge about the ...

2024 has been a crucial year for the power electronics sector in terms of development, preparing for radical changes in 2025 and beyond. 2024 has been a crucial year for the power electronics sector ...

Aehr Test Systems disclosed an initial order for a FOX-NP wafer-level test and burn-in system intended for GaN power devices. Aehr Test Systems disclosed that an initial customer order for a FOX ...

While the failure mechanisms in gallium nitride (GaN) high electron mobility transistors (HEMTs) have been widely studied and significant improvements made in their reliability, this field is still ...