With artificial intelligence demanding so much memory, the key commodity is likely to be in “undersupply” in 2026, investment ...

Resistive random access memory (ReRAM), which is based on oxide materials, is gaining attention as a next-generation memory ...

The newly developed HBM4 features doubled bandwidth with 2,048 I/O terminals and more than 40% improved power efficiency.

South Korea's SK Hynix said on Friday it has completed its internal certification process for next generation high-bandwidth ...

SK Hynix said on Friday it has completed its internal certification process for next generation high-bandwidth memory 4(HBM4) ...

AP Memory, a leading global design company providing customized memory solutions, today announced that its next-generation PSRAM—ApSRAMTM (Attached-pSRAM)—has successfully passed customer validation ...

Resistive Random Access Memory (ReRAM), which is based on oxide materials, is gaining attention as a next-generation memory ...

Semiconductor equipments provider Lam Research (LRCX) is on track to record its seventh consecutive gaining session, with the ...

RAM consists of a grid of memory cells, each capable of storing a small amount of data, typically one bit (binary digit) or a few bits. These cells are organized into rows and columns, forming a ...

Advances in spintronics have led to the practical use of magnetoresistive random-access memory (MRAM), a non-volatile memory technology that supports energy-efficient semiconductor integrated circuits ...

LONDON--(BUSINESS WIRE)--Technavio analysts forecast the global dynamic random access memory (DRAM) market to grow at a CAGR of over 1% during the forecast period, according to their latest report.