Structural irregularities in the body of an IGBT module can cause immediate or eventual electrical failure. These irregularities may be detected by three-dimensional acoustic micro imaging. A lack of ...
Testing Devices In Module Packages And Designing Cryogenic Current Sensors For All-Electric Aircraft
A technical paper titled “Characterizing semiconductor devices for all-electric aircraft” was published by researchers at University of Strathclyde (Glasgow) and Airbus UpNext. “Cryogenic propulsion ...
Guoshi Technology has applied for a new patent regarding IGBT leakage testing, and this technology may change current testing methods. The patent indicates that the device employs a modular design, is ...
Dissipated heat in a junction is one of the major effects that can influence the reliability of die-attach materials used in an IGBT’s chip. Power cycling tests are ideal to mimic the lifecycle of a ...
IGBT (Insulated Gate Bipolar Transistor) modules perform critical functions involving high power, so field failures of these modules tend to be both inconvenient and costly. Understandably, the makers ...
The MIXD600PF650TSF is a 600-V, 650-A IGBT module in the SimBus-F outline featuring high level of integration with only one power semiconductor module required for the whole drive. It is designed for ...
NUREMBURG, Germany--(BUSINESS WIRE)--PCIM 2023 – Power Integrations (NASDAQ: POWI), the leader in gate-driver technology for medium- and high-voltage inverter applications, today announced a new, ...
CYPRESS, Calif.--(BUSINESS WIRE)--Mitsubishi Electric US, Inc. announced a new version of its 2.0kV LV100 insulated-gate bipolar transistor (IGBT) module specifically designed for photovoltaic (PV) ...
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