This research was published in Advanced Science ("High-temperature and high-electron mobility metal-oxide-semiconductor field-effect transistors based on n-type diamond"). World’s First N-Channel ...
Diamond field-effect transistors (FETs) represent a cutting-edge development in semiconductor technology, leveraging the exceptional thermal conductivity, high breakdown voltage, and chemical ...
(Left) Atomic force microscope image of diamond epilayer surface morphology. (Middle) Optical microscope image of the diamond MOSFET. (Right) Performance of the MOSFET measured at 300°C. The drain ...
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