TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of its LV100-type T-series 2.0kV insulated-gate bipolar transistor (IGBT) ...
TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that beginning February 15 it will provide samples of its new LV100-type 1.2-kV IGBT module as an industrial-use ...
Mitsubishi announced that it has begun shipping samples of two new S1-Series high-voltage IGBT modules rated at 1.7 kV. These two components are useful for large industrial equipment, such as railcars ...
Recent developments in IGBT and FWD (free wheeling diode) devices are enabling designers to achieve higher switching performance, lower electrical losses, and higher temperature operation in high ...
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